Semiconductor device modeling

Statistical measurements and Monte-Carlo simulations of DCR in SPADs
Dark Count Rate (DCR) in 3D-stacked CMOS Single-Photon Avalanche Diode (SPAD) is investigated by means of measurements and simulations …
Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Francis Calmon
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Semi-Empirical model for optical properties of $textSi_1-xtextGe_x$ alloys accounting for strain and temperature
A semi-empirical model for the optical properties of SiGe alloys is proposed, based on physical considerations and the summation of …
Jérémy Grebot, Gabriel Mugny, Rémi Helleboid, Isobel Nicholson, Francesco Abbate, Denis Rideau, Hélène Wehbe-Alause, Claire Scheid, Stéphane Lanteri
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