Semiconductor device measurement

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study
Dark Count Rate (DCR) in Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor technology is characterized …
Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Francis Calmon
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Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability
Single Photon Avalanche Diodes (SPAD) are key optoelectronic detectors for medical imaging, camera ranging and automotive laser imaging …
D. Rideau, Y. Oussaiti, J. Grebot, Rémi Helleboid, A. Lopez, G. Mugny, E. Bourreau, D. Golanski, B. Mamdy, H. Wehbe Alause, I. Nicholson, S. Pellegrini, C.E. Vlimant, M. Agnew, T. Cazimajou, M. Pala, J. Saint-Martin, P. Dollfus
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