Impact ionization

Quenching Statistics of Silicon Single Photon Avalanche Diodes

The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte …

Thibauld Cazimajou, Marco Pala, Jérôme Saint-Martin, Rémi Helleboid, Jérémy Grebot, Denis Rideau, Philippe Dollfus