Statistical measurements and Monte-Carlo simulations of DCR in SPADs

Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Francis Calmon
September, 2022
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Abstract

Dark Count Rate (DCR) in 3D-stacked CMOS Single-Photon Avalanche Diode (SPAD) is investigated by means of measurements and simulations at various temperatures and voltages. This study strengthens previous hypotheses on the roles of depleted regions and interfaces in DCR generation by examining device architectures. A nonradiative multiphonon-assisted trapping model (NRM) is used to calculate the carrier capture/emission rate of defect sites. Systematic comparison between measurement and Empirical Monte-Carlo (EMC) simulation, accounting for the stochastic diffusion of carriers in computation of the avalanche breakdown probability (Pt), was performed to investigate trap and avalanche positions within the device. This simulation unveils device regions contributing to different DCR dynamics by de-embedding carrier avalanche localizations. Based on this simulation methodology, the DCR statistical distribution induced by local device-to-device process variation is covered by randomly setting the defect positions and sizes within the device.

Type
Conference paper
Publication
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)
avalanche breakdown probability Computational modeling Dark Count Rate (DCR) defects Empirical Monte-Carlo Monte Carlo methods Semiconductor device modeling single-photon avalanche diode (SPAD) statistical analysis Stochastic processes Technology computer-aided design (TCAD) Temperature distribution Temperature measurement thermal activation energy Voltage measurement
Rémi Helleboid
Rémi Helleboid
PhD Student

My research interests include semiconductor physics, device simulation and electronic transport.