Automatic optimization of doping profile for high performance Single-Photon Avalanche Diodes

Abstract

A method to efficiently optimize doping profile for high performance Single-Photon Avalanche Diodes is presented. The method aims at maximizing the photon detection efficiency while minimizing the timing jitter and keeping the breakdown voltage in a reasonable range by optimizing the doping profile of the device. Two different optimization methods are compared, and their performances are evaluated on a one-dimensional model of a Si-SPAD.

Publication
International Workshop on Computational Nanotechnology - IWCN 2023
Rémi Helleboid
Rémi Helleboid
PhD Student

My research interests include semiconductor physics, device simulation and electronic transport.