Semi-Empirical model for optical properties of $textSi_1-xtextGe_x$ alloys accounting for strain and temperature

Jérémy Grebot, Gabriel Mugny, Rémi Helleboid, Isobel Nicholson, Francesco Abbate, Denis Rideau, Hélène Wehbe-Alause, Claire Scheid, Stéphane Lanteri
September, 2021
Cite DOI

Abstract

A semi-empirical model for the optical properties of SiGe alloys is proposed, based on physical considerations and the summation of Tauc-Lorentz and parametric oscillators. The key parameters of the oscillators are intuited from the optical transition and the symmetry points in the band structure. The model is fitted on extensive experimental data, for different temperatures, germanium concentrations and for both unstrained and strained on (100) Silicium wafer cases. This model can be used in optical simulation tools, in order to help the design of optoelectronic devices based on SiGe materials.

Type
Conference paper
Publication
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC)
Band structure Computational modeling Data models Nonlinear optics optical absorption Optoelectronic devices permittivity Predictive models RCWA Semiconductor device modeling SiGe single-photon avalanche diode (SPAD) strain Technology computer-aided design (TCAD) Temperature distribution Tight-Binding
Rémi Helleboid
Rémi Helleboid
PhD Student

My research interests include semiconductor physics, device simulation and electronic transport.